Semiconductor Components Industries, LLC, 2005
March, 2005 - Rev. 4
1
Publication Order Number:
NTR1P02T1/D
NTR1P02T1
Power MOSFET
-20 V, -1 A, P-Channel SOT-23 Package
Features
Ultra Low On-Resistance Provides Higher Efficiency
and Extends Battery Life
R
DS(on)
= 0.180
W, V
GS
= -10 V
R
DS(on)
= 0.280
W, V
GS
= -4.5 V
Power Management in Portable and Battery-Powered Products
Miniature SOT-23 Surface Mount Package Saves Board Space
Mounting Information for SOT-23 Package Provided
Applications
DC-DC Converters
Computers
Printers
PCMCIA Cards
Cellular and Cordless Telephones
MAXIMUM RATINGS
(T
J
= 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain-to-Source Voltage
V
DSS
-20
V
Gate-to-Source Voltage - Continuous
V
GS
20
V
Drain Current
- Continuous @ T
A
= 25
C
- Pulsed Drain Current (t
p
1
m
s)
I
D
I
DM
-1.0
-2.67
A
Total Power Dissipation @ T
A
= 25
C
P
D
400
mW
Operating and Storage Temperature Range
T
J
, T
stg
- 55 to
150
C
Thermal Resistance - Junction-to-Ambient
R
q
JA
300
C/W
Maximum Lead Temperature for Soldering
Purposes, (1/8
from case for 10 s)
T
L
260
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
D
G
S
Device
Package
Shipping
ORDERING INFORMATION
NTR1P02T1
SOT-23
3000/Tape & Reel
P-Channel
NTR1P02T3
SOT-23
10,000/Tape & Reel
http://onsemi.com
-20 V
148 m
W
@ -10 V
R
DS(on)
TYP
-1.0 A
I
D
MAX
V
(BR)DSS
SOT-23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
2
P2
= Specific Device Code
M
= Date Code
3
1
3
Drain
1
Gate
2
Source
P2
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
M
NTR1P02T1
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2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= -10
m
A)
(Positive Temperature Coefficient)
V
(BR)DSS
-20
32
V
mV/
C
Zero Gate Voltage Drain Current
(V
DS
= -20 V, V
GS
= 0 V, T
J
= 25
C)
(V
DS
= -20 V, V
GS
= 0 V, T
J
= 150
C)
I
DSS
-1.0
-10
m
A
Gate-Body Leakage Current (V
GS
=
20 V, V
DS
= 0 V)
I
GSS
100
nA
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= -250
m
A)
(Negative Temperature Coefficient)
V
GS(th)
-1.1
-1.9
-4.0
-2.3
V
mV/
C
Static Drain-to-Source On-State Resistance
(V
GS
= -10 V, I
D
= -1.5 A)
(V
GS
= -4.5 V, I
D
= -0.75 A)
R
DS(on)
0.148
0.235
0.180
0.280
W
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= -5 V, V
GS
= 0 V, f = 1.0 MHz)
C
iss
165
pF
Output Capacitance
(V
DS
= -5 V, V
GS
= 0 V, f = 1.0 MHz)
C
oss
110
Reverse Transfer Capacitance
(V
DS
= -5 V, V
GS
= 0 V, f = 1.0 MHz)
C
rss
35
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
(V
DD
= -15 V, I
D
= -1 A, V
GS
= -5 V, R
G
= 2.5
W
)
t
d(on)
7.0
ns
Rise Time
(V
DD
= -15 V, I
D
= -1 A, V
GS
= -5 V, R
G
= 2.5
W
)
t
r
9.0
Turn-Off Delay Time
(V
DD
= -15 V, I
D
= -1 A, V
GS
= -5 V, R
G
= 2.5
W
)
t
d(off)
9.0
Fall Time
(V
DD
= -15 V, I
D
= -1 A, V
GS
= -5 V, R
G
= 2.5
W
)
t
f
3.0
Total Gate Charge
(V
DS
= -15 V, V
GS
= -5 V, I
D
= -0.8 A)
Q
tot
2.5
nC
Gate-Source Charge
(V
DS
= -15 V, V
GS
= -5 V, I
D
= -0.8 A)
Q
gs
0.75
Gate-Drain Charge
(V
DS
= -15 V, V
GS
= -5 V, I
D
= -0.8 A)
Q
gd
1.0
BODY-DRAIN DIODE RATINGS (Note 1)
Diode Forward On-Voltage (Note 2)
(I
S
= -0.6 A, V
GS
= 0 V)
(I
S
= -0.6 A, V
GS
= 0 V, T
J
= 150
C)
V
SD
-0.8
-0.6
-1.0
V
Reverse Recovery Time
(I
1 A dI /dt
100 A/
V
0 V)
t
rr
13.5
ns
(I
S
= -1 A, dI
S
/dt = 100 A/
m
s, V
GS
= 0 V)
t
a
10.5
t
b
3.0
Reverse Recovery Stored Charge
(I
S
= -1 A, dI
S
/dt = 100 A/
m
s, V
GS
= 0 V)
Q
RR
0.008
m
C
1. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2%.
2. Switching characteristics are independent of operating junction temperature.
NTR1P02T1
http://onsemi.com
3
-4 V
1
1.25
0.75
2
0.5
0.25
0
1.5
0.275
0.25
0.2
0.15
0.1
0.05
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-I
D
, DRAIN CURRENT (AMPS)
-V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
-I
D
, DRAIN CURRENT (AMPS)
-I
D
, DRAIN CURRENT (AMPS)
-I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE (
W
)
R
DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE (
W
)
T
J
, JUNCTION TEMPERATURE (
C)
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE
(NORMALIZED)
-I
DSS
, LEAKAGE (nA)
2.5
1.5
0.5
0
10
100
1000
0
1.5
1.25
1
0.5
0.25
0.5
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.1
0.45
0.35
0.3
0.2
0.25
0.1
0.05
0.6
1
Figure 3. On-Resistance versus Drain Current
and Temperature
Figure 4. On-Resistance versus Drain Current
and Temperature
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Drain-to-Source Leakage Current
versus Voltage
2.5
-45
55
30
5
-20
80
130
105
1
4
2
1.5
1
11
3
21
0
2
0.2
0.8
0.6
0.4
1
1.6
1.2
155
2
1.5
2.5
3
3.5
V
DS
-10 V
T
J
= 25
C
T
J
= -40
C
T
J
= 125
C
V
GS
= -4.5 V
V
GS
= 0 V
T
J
= 125
C
T
J
= 150
C
I
D
= -1.5 A
V
GS
= -10 V
V
GS
= -2.5 V
0.8
1.4
-3 V
T
J
= 25
C
V
GS
= -10 V
T
J
= 25
C
T
J
= -40
C
T
J
= 150
C
1
1
0.75
1.75
-3.5 V
-4.5 V
1.75
1.25
0.75
0.25
2.25
1.75
0.5
0.4
0.7
0.9
0.15
0.2
0.3
0.4
T
J
= 25
C
T
J
= 150
C
T
J
= -40
C
0.075
0.125
0.225
0.175
1
2
5
7
9
13
15
17
19
NTR1P02T1
http://onsemi.com
4
C
iss
GATE-TO-SOURCE OR DRAIN-TO-SOURCE
VOLTAGE (VOLTS)
C, CAP
ACIT
ANCE (pF)
Q
G
, TOTAL GATE CHARGE (nC)
-V
GS
, GA
TE-T
O-SOURCE VOL
T
AGE (VOL
TS)
R
G
, GATE RESISTANCE (
W
)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
t, TIME (ns)
100
1
6
3
1.5
0
1.001
0.401
0.201
0.101
0.001
10
10
300
15
5
0
250
200
150
100
0
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source and
Drain-to-Source Voltage versus Total Charge
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
25
0
1
0.5
1
10
100
2.0E-01
4.0E-01
3.0E-01
5.0E-01
7.0E-01
50
10
1.5
2
I
D
= -1 A
T
J
= 25
C
T
J
= 25
C
C
rss
C
oss
C
iss
V
DD
= -15 V
I
D
= -1 A
V
GS
= -5 V
V
GS
= 0 V
T
J
= 25
C
t
r
t
d(off)
t
d(on)
t
f
Q
T
Q
2
Q
1
5
20
C
rss
V
GS
= 0 V
V
DS
= 0 V
V
GS
V
DS
0.301
0.801
0.601
0.501
0.701
0.901
6.0E-01
-V
GS
-V
DS
4.5
NTR1P02T1
http://onsemi.com
5
PACKAGE DIMENSIONS
SOT-23
(TO-236)
CASE 318-08
ISSUE AK
SOLDERING FOOTPRINT
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
D
J
K
L
A
C
B S
H
G
V
3
1
2
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.1102
0.1197
2.80
3.04
INCHES
B
0.0472
0.0551
1.20
1.40
C
0.0350
0.0440
0.89
1.11
D
0.0150
0.0200
0.37
0.50
G
0.0701
0.0807
1.78
2.04
H
0.0005
0.0040
0.013
0.100
J
0.0034
0.0070
0.085
0.177
K
0.0140
0.0285
0.35
0.69
L
0.0350
0.0401
0.89
1.02
S
0.0830
0.1039
2.10
2.64
V
0.0177
0.0236
0.45
0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318-01 THRU -07 AND -09 OBSOLETE, NEW
STANDARD 318-08.
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